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Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
Drain-Source Breakdown Voltage
V GS = 0 V, I D = 250 μA
N-Ch
25
V
V GS = 0 V, I D = -250 μA
P-Ch
-25
? BV DSS / ? T J
Breakdown Voltage Temp. Coefficient
I D = 250 μA, Referenced to 25 o C
N-Ch
26
mV / o C
I D = -250 μA, Referenced to 25 o C
P-Ch
-22
I DSS
Zero Gate Voltage Drain Current
V DS = 20 V, V GS = 0 V,
N-Ch
1
μA
T J = 55°C
10
I DSS
Zero Gate Voltage Drain Current
V DS =-20 V, V GS = 0 V,
P-Ch
-1
μA
T J = 55°C
-10
I GSS
Gate - Body Leakage Current
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
N-Ch
P-Ch
100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
? V GS(th) / ? T J
Gate Threshold Voltage Temp. Coefficient
I D = 250 μA, Referenced to 25 o C
N-Ch
-2.6
mV / o C
I D = -250 μA, Referenced to 25 o C
P-Ch
2.1
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
N-Ch
0.65
0.8
1.5
V
V DS = V GS , I D = -250 μA
P-Ch
-0.65
-0.86
-1.5
R DS(ON)
Static Drain-Source On-Resistance
V GS = 4.5 V, I D = 0.5 A
N-Ch
0.33
0.45
?
V GS = 2.7 V, I D = 0.25A
T J =125°C
0.51
0.44
0.72
0.6
V GS = -4.5 V, I D = -0.5 A
V GS = -2.7 V, I D = -0.25 A
T J =125°C
P-Ch
0.87
1.21
1.22
1.1
1.8
1.5
I D(ON)
On-State Drain Current
V GS = 4.5 V, V DS = 5 V
N-Ch
1
A
V GS = -4.5 V, V DS = -5 V
P-Ch
-1
g FS
Forward Transconductance
V DS = 5 V, I D = 0.5 A
N-Ch
1.45
S
DYNAMIC CHARACTERISTICS
V DS = -5 V, I D = -0.5 A
P-Ch
0.8
C iss
Input Capacitance
N-Channel
N-Ch
50
pF
V DS = 10 V, V GS = 0 V,
P-Ch
63
C oss
Output Capacitance
f = 1.0 MHz
N-Ch
28
pF
P-Channel
P-Ch
34
C rss
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0V,
N-Ch
9
pF
f = 1.0 MHz
P-Ch
10
FDC6321C.RevB
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